As AI demand grows, memory manufacturers are prioritising the production of high-margin HBM chips over traditional DDR RAM.

A new technical paper titled “Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model” was published by researchers at Georgia Tech, imec and National Technical University ...

Samsung Electronics reported record-breaking memory chip revenue in the third quarter, signaling a strong turnaround powered ...

Samsung Electronics Co.’s semiconductor arm reported a bigger-than-expected 80% surge in profit, suggesting global AI demand is helping drive a recovery at the Korean company’s most important business ...

To make accurate predictions and reliably complete desired tasks, most artificial intelligence (AI) systems need to rapidly ...

A new paper published in PLOS One shows that mushrooms can act as the "memristors" required for many next-gen computing ...

Amazon caught everyone off guard by slashing prices across all capacities without any advance warning, and these deals ...

DETROIT (AP) — Making electric vehicles and their batteries is a dirty process that uses a lot of energy. But a new study ...

Every computer needs Random Access Memory (or RAM) for an operating system’s temporary storage, and there’s many ways to ...

Oppo Find X9s is paired with 12 GB RAM and 256 GB internal storage (UFS), though there’s no memory card slot for expansion.

Abstract: We present a framework for design technology co-optimization (DTCO) of the main memory system with one transistor-one capacitor (1T1C) ferroelectric random access memory (FERAM) as an ...